Description: Type Designator: FGH60N60SFD Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: 378 Maximum Collector-Emitter Voltage 'Vce', V: 600 Maximum Gate-Emitter Voltage 'Vge', V: 20 Maximum Collector Current 'Ic' @25℃, A: 120 Collector-Emitter saturation Voltage 'VCE(sat)', typ, V: 2.3 Maximum G-E Threshold Voltag 'VGE(th)', V: 6.5 Maximum Junction Temperature (Tj), ℃: 150 Rise Time (tr), typ, nS: 42 Collector Capacity (Cc), typ, pF: 350 Total Gate Charge (Qg), typ, nC: 198 Package: TO247 Package Included: 1 x FGH60N60SFD Field Stop IGBT 60N60 60A 600V FGH60N60 Transistor TO-247
Price: 4.89 USD
Location: Villa Park, Illinois
End Time: 2024-07-11T03:00:56.000Z
Shipping Cost: N/A USD
Product Images
Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Brand: Onsemi
Mounting Style: Through-Hole
Series: FGH60N60SFD
Type: IGBT
Bundle Description: FGH60N60SFD Field Stop IGBT FGH60N60 Transistor TO-247
Number of Elements per Chip: 1
Number of Pins: 3
Packaging: Bag
Package/Case: TO-247
Transistor Category: Power Transistor
MPN: FGH60N60
