Description: Gas Source Molecular Beam Epitaxy : Growth and Properties of Phosphorus Containing Iiiv Heterostructures, Paperback by Panish, Morton B.; Temkin, Henryk, ISBN 3642781292, ISBN-13 9783642781292, Like New Used, Free shipping in the US The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
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Book Title: Gas Source Molecular Beam Epitaxy : Growth and Properties of Phos
Number of Pages: Xiv, 428 Pages
Language: English
Publication Name: Gas Source Molecular Beam Epitaxy : Growth and Properties of Phosphorus Containing III-V Heterostructures
Publisher: Springer Berlin / Heidelberg
Subject: Lasers & Photonics, Physics / Optics & Light, Electronics / Semiconductors, Electronics / General, Physics / Atomic & Molecular
Publication Year: 2011
Type: Textbook
Item Weight: 23.6 Oz
Subject Area: Technology & Engineering, Science
Author: Henryk Temkin, Morton B. Panish
Item Length: 9.3 in
Item Width: 6.1 in
Series: Springer Series in Materials Science Ser.
Format: Trade Paperback
