ULSI Semiconductor Technology Atlas by Chih-Hang Tung (English) Hardcover Book

Description: ULSI Semiconductor Technology Atlas by Chih-Hang Tung, George T.T. Sheng, Chih-Yuan Lu Ultra Large Scale Integration (ULSI) refers to chips with more than 10,000,000 devices per chip. It is the natural outgrowth of VLSI (Very Large Scale Integration). ULSI Semiconductor Technology Atlas uses TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and associated problems. FORMAT Hardcover LANGUAGE English CONDITION Brand New Publisher Description More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs Back Cover More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: More than 1,100 TEM images to illustrate the science of ULSI A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs Flap More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: More than 1,100 TEM images to illustrate the science of ULSI A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs Author Biography CHIH-HANG TUNG is a senior member of the technical staff and Project Leader at the Institute of Microelectronics in Singapore. GEORGE T. T. SHENG was the first to develop cross-sectioning samples of TEM studies of semiconductor devices and has been involved with many other groundbreaking projects at Bell Labs. CHIH-YUAN LU is Chairman and CEO of Ardentec Corp., an ULSI testing service company. He is also CTO of Macronix International Co., Ltd., the eighth largest worldwide NVM semiconductor company. Table of Contents FOREWORD ix PREFACE xi PART I 1 1 Microelectronics and Microscopy 3 2 ULSI Process Technology 36 3 Applications of TEM for Construction Analysis 61 4 TEM Sample Preparation Techniques 90 PART II 141 5 Ion Implantation and Substrate Defects 143 6 Dielectrics and Isolation 179 7 Silicides, Polycide, and Salicide 256 8 Metallization and Interconnects 287 PART III 343 9 ULSI Devices I: DRAM Cell with Planar Capacitor 345 10 ULSI Devices II: DRAM Cell with Stacked Capacitor 365 11 ULSI Devices III: DRAM Cell with Trench Capacitor 399 12 ULSI Devices IV: SRAM 445 PART IV 475 13 TEM in Failure Analysis 477 14 Novel Devices and Materials 526 15 TEM in Under Bump Metallization (UBM) and Advanced Electronics Packaging Technologies 558 16 High-Resolution TEM in Microelectronics 609 INDEX 647 Review "...provides a historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issue." (IEEE Solid-State Circuits Society Newsletter, January 2004) "…strongly recommended…" (E-Streams, Vol. 7, No. 4) Long Description More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation Part II focuses on key ULSI modules ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: More than 1,100 TEM images to illustrate the science of ULSI A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs Review Text "...provides a historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issue." (IEEE Solid-State Circuits Society Newsletter, January 2004) "?strongly recommended?" (E-Streams, Vol. 7, No. 4) Review Quote "… strongly recommended… " "(E-Streams, Vol. 7, No. 4) Promotional "Headline" "...provides a historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issue." (IEEE Solid-State Circuits Society Newsletter, January 2004)"...strongly recommended..." (E-Streams, Vol. 7, No. 4) Feature Contains more than 1,100 TEM images to illustrate the science of ULSI Gives a historical introduction to the technology and covers the evolution of basic ULSI process problems and issues. Part I includes basic introductions to the ULSI process, device construction analysis and TEM samples preparation. Part II focuses on key ULSI Modules-Ion Implantation and defects, dielectrics and isolation structures, silicides/ salicides, and metallization. Part III focuses on Integrated Devices, including Complete Planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development. Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (under bump metallization) studies, and high resolution TEM in microelectronics. Illustrates TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, new SiGe RFIC, MEMS, and CD-ROM. Details ISBN0471457728 Author Chih-Yuan Lu Short Title ULSI SEMICONDUCTOR TECHNOLOGY Language English ISBN-10 0471457728 ISBN-13 9780471457725 Media Book Format Hardcover Illustrations Yes Year 2003 Place of Publication New York Country of Publication United States Alternative 9780471668794 Edition 1st DOI 10.1604/9780471457725 UK Release Date 2003-10-14 AU Release Date 2003-09-22 NZ Release Date 2003-09-22 Pages 680 Publisher John Wiley & Sons Inc Publication Date 2003-10-14 Imprint Wiley-Interscience DEWEY 621.38152 Audience Professional & Vocational US Release Date 2003-10-14 We've got this At The Nile, if you're looking for it, we've got it. With fast shipping, low prices, friendly service and well over a million items - you're bound to find what you want, at a price you'll love! TheNile_Item_ID:126609567;

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